Visible spectrophotometer LVS-A10 offers 330 to 1000 nm wavelength range with single beam has 1200 lines/mm grating C-T monochromator optical system. It uses silicon photo diode detector and tungsten lamp as light source which provides the best wavelength coverage across the working range of the spectrophotometer. The Display screen show the concentration data. This highly accurate spectrophotometer is designed for industries and laboratories.
Request Quote| Wavelength Range | 330 to 1000 nm |
| Spectral Bandwidth | 5 nm |
| Wavelength Accuracy | ± 2 nm |
| Wavelength Repeatability | ≤ 1.0 nm |
| Photometric Range | T: 0 to199.9%, A: -0.3 to2.5 Abs, F; 0 to 9999, C: 0 to 9999 |
| Photometric Accuracy | ± 0.5 % T |
| Photometric Repeatability | ≤ 0.2 % T |
| Detector | Silicone photo diode |
| Light Source | 20 W, 12 V Tungsten lamp |
| Stray Light | ≤ 0.5 % T (360 nm) |
| Stability | Dark current: ≤ 0.2 % T, Light Current: ≤ 0.5 % T |
| Power Requirement | 220 V ± 20 V, 50 Hz ± 1 Hz |
| Dimensions | 470 × 350 × 200 mm |
| Weight | 8 kg |
| Optical System | Single beam, C-T grating monochromator 1200 lines/ mm |
Visible spectrophotometer is used for quantitative and qualitative analysis, detection of impurities and functional groups determination etc. across biochemical, environmental, food, medical, petrochemical and other industry.
| Model | Wavelength Range | Setting Wavelength | Spectral Bandwidth | Wavelength Accuracy | Wavelength Repeatability | Photometric Range | Photometric Mode | Photometric Accuracy | Photometric Repeatability | Transmittance accuracy | Transmittance repeatability | Detector | Light Source | Stray Light | Stability | Data Output Port | Power Requirement | Dimensions | Noise | Weight | Gross Weight | Net Weight | Power | Display LCD | Optical System | Baseline Linearity | Baseline Drift | Baseline Flatness | Printer Port | Packing Size | Software | Packing Weight |
| LVS-A10 | 330 to 1000 nm | - | 5 nm | ± 2 nm | ≤ 1.0 nm | T: 0 to199.9%, A: -0.3 to2.5 Abs, F; 0 to 9999, C: 0 to 9999 | - | ± 0.5 % T | ≤ 0.2 % T | - | - | Silicone photo diode | 20 W, 12 V Tungsten lamp | ≤ 0.5 % T (360 nm) | Dark current: ≤ 0.2 % T, Light Current: ≤ 0.5 % T | - | 220 V ± 20 V, 50 Hz ± 1 Hz | 470 × 350 × 200 mm | - | 8 kg | - | - | - | - | Single beam, C-T grating monochromator 1200 lines/ mm | - | - | - | - | - | - | - |
| LVS-A11 | 335 ~ 1000 nm | - | 4 nm | ± 2 nm | 1 nm | T: 0 ~ 199.9 % , A: (-0.3) ~ 2.5A bs, F: 0 ~ 9999, C: 0 ~ 9999 | - | ± 0.5 % T | 0.2 % T | - | - | Silicon photo diode | Tungsten lamp (Socket Type, 20W / 12V, 2000h) | ≤ 0.5 % T (360 nm) | ≤ 0.5 % T / 5min | - | 220 V / 50 Hz | 385 × 330 × 185 mm | - | 10 kg | - | - | - | - | 1200 lines / mm grating | - | - | - | - | - | - | - |
| LVS-B10 | 325 ~ 1000 nm | Automatic | 2 nm | ± 1.0 nm | ≤ 0.2 nm | (-0.3) ~ 3 A | - | ± 0.3 % T | 0.15 % τ | - | - | Import Silicon Photodiode Detector | Import Tungsten Lamp | ≤ 0.05 % τ | 0.001 A / h at 500 nm | - | AC 220 V / 50 Hz, 110 V / 60 Hz. | 460 × 330 × 210 mm | - | 11 kg | - | - | 120 W | - | - | - | - | - | - | - | - | - |
| LVS-C10 | 320 ~ 1100 nm | - | 4 nm | ± 0.5 nm | ≤ 0.2 nm | (-0.3) ~ 3 A | - | ± 0.3 % T | 0.15 % τ | - | - | Import Silicon Photodiode Detector | Import Tungsten Lamp | ≤ 0.05 % τ | 0.001 A / h 30 min at 500 nm | - | AC 220 V / 50 Hz, 110 V / 60 Hz. | 480 × 350 × 220 mm | - | 11 kg | - | - | 120 W | Display resolution 128 × 64 Dots LCD | - | - | - | - | - | - | - | - |
| LVS-C11 | 320 ~ 1000 nm | - | 2 nm | ± 0.5 nm | ≤ 0.2 nm | (-0.3) ~ 3 A | - | ± 0.3 % T | 0.15 % τ | - | - | Import Silicon Photodiode Detector | Import Tungsten Lamp | ≤ 0.05 % τ | 0.001 A / h 30 min at 500 nm | - | AC 220 V / 50 Hz, 110 V / 60 Hz. | 480 × 350 × 220 mm | - | 11 kg | - | - | 120 W | Display resolution 128 × 64 Dots LCD | - | - | - | - | - | - | - | - |
| LVS-A20 | - | - | - | ± 2nm | ≤ 1 nm | 0 to 100.0 %T 0 to 1.999 A 0 to 1999 C | - | ± 0.5 % T | ≤ 0.2 % T | - | - | Silicon Photocell | - | - | - | - | - | - | 100%（T）noise≤0.3%(T) ， 0%（T) noise ≤0.2 %(T) | - | - | - | - | - | - | - | - | - | - | - | - | - |
| LVS-A21 | - | - | - | ± 2nm | ≤ 1 nm | 0 to 100.0 %T 0 to 1.999 A 0 to 1999 C | - | ± 0.5 % T | ≤ 0.2 % T | - | - | Silicon Photocell | - | - | - | - | - | - | 100%（T）noise≤0.3%(T) ， 0%（T) noise ≤0.2 %(T) | - | - | - | - | - | - | - | - | - | - | - | - | - |
| LVS-A30 | - | - | - | ± 0.8 nm | ≤ 0.3 nm | 0 to 200 %T, -0.3 to 3 A, 0 to 9999 C | - | ± 0.002A (0 to 0.5A), ±0.004 A (0.5 to 1A), ±0.5 % T (0 to 100% T) | ≤ 0.001A (0 to 0.5 A), ≤0.002A (0.5 to 1A), ≤0.2 % T (0 to 100% T) | - | - | Silicon Photocell | - | - | ± 0.002 A/h (500 nm, 0A) | - | - | - | ≤0.2 % T/3 min (250/500 nm, 0% T), ≤ 0.5% T/3 min (250/500 nm, 100% T) | - | - | - | - | - | - | - | - | - | - | - | - | - |
