Visible spectrophotometer comes with large memory space which can store multiple sets of data. It comes with monolithic, microprocessor controlled LCD display of 128 × 64 bit. In this vis-spectrophotometer standard curve for quantitative measurement can be established in simple method. Quantitative measurement of standard curve is established through direct input of K & B factor. It is useful in scientific research and industries for detection of impurities and other elements.
| Wavelength Range | 325 ~ 1000 nm |
| Setting Wavelength | Automatic |
| Spectral Bandwidth | 2 nm |
| Wavelength Accuracy | ± 1.0 nm |
| Wavelength Repeatability | ≤ 0.2 nm |
| Photometric Range | (-0.3) ~ 3 A |
| Photometric Accuracy | ± 0.3 % T |
| Photometric Repeatability | 0.15 % τ |
| Detector | Import Silicon Photodiode Detector |
| Light Source | Import Tungsten Lamp |
| Stray Light | ≤ 0.05 % τ |
| Stability | 0.001 A / h at 500 nm |
| Power Requirement | AC 220 V / 50 Hz, 110 V / 60 Hz. |
| Dimensions | 460 × 330 × 210 mm |
| Weight | 11 kg |
| Power | 120 W |
It is useful in scientific research and industries for quantitative and qualitative analysis, detection of impurities and functional groups determination.
| Model | Wavelength Range | Setting Wavelength | Spectral Bandwidth | Wavelength Accuracy | Wavelength Repeatability | Photometric Range | Photometric Mode | Photometric Accuracy | Photometric Repeatability | Transmittance accuracy | Transmittance repeatability | Detector | Light Source | Stray Light | Stability | Data Output Port | Power Requirement | Dimensions | Noise | Weight | Gross Weight | Net Weight | Power | Display LCD | Optical System | Baseline Linearity | Baseline Drift | Baseline Flatness | Printer Port | Packing Size | Software | Packing Weight |
| LVS-A10 | 330 to 1000 nm | - | 5 nm | ± 2 nm | ≤ 1.0 nm | T: 0 to199.9%, A: -0.3 to2.5 Abs, F; 0 to 9999, C: 0 to 9999 | - | ± 0.5 % T | ≤ 0.2 % T | - | - | Silicone photo diode | 20 W, 12 V Tungsten lamp | ≤ 0.5 % T (360 nm) | Dark current: ≤ 0.2 % T, Light Current: ≤ 0.5 % T | - | 220 V ± 20 V, 50 Hz ± 1 Hz | 470 × 350 × 200 mm | - | 8 kg | - | - | - | - | Single beam, C-T grating monochromator 1200 lines/ mm | - | - | - | - | - | - | - |
| LVS-A11 | 335 ~ 1000 nm | - | 4 nm | ± 2 nm | 1 nm | T: 0 ~ 199.9 % , A: (-0.3) ~ 2.5A bs, F: 0 ~ 9999, C: 0 ~ 9999 | - | ± 0.5 % T | 0.2 % T | - | - | Silicon photo diode | Tungsten lamp (Socket Type, 20W / 12V, 2000h) | ≤ 0.5 % T (360 nm) | ≤ 0.5 % T / 5min | - | 220 V / 50 Hz | 385 × 330 × 185 mm | - | 10 kg | - | - | - | - | 1200 lines / mm grating | - | - | - | - | - | - | - |
| LVS-B10 | 325 ~ 1000 nm | Automatic | 2 nm | ± 1.0 nm | ≤ 0.2 nm | (-0.3) ~ 3 A | - | ± 0.3 % T | 0.15 % τ | - | - | Import Silicon Photodiode Detector | Import Tungsten Lamp | ≤ 0.05 % τ | 0.001 A / h at 500 nm | - | AC 220 V / 50 Hz, 110 V / 60 Hz. | 460 × 330 × 210 mm | - | 11 kg | - | - | 120 W | - | - | - | - | - | - | - | - | - |
| LVS-C10 | 320 ~ 1100 nm | - | 4 nm | ± 0.5 nm | ≤ 0.2 nm | (-0.3) ~ 3 A | - | ± 0.3 % T | 0.15 % τ | - | - | Import Silicon Photodiode Detector | Import Tungsten Lamp | ≤ 0.05 % τ | 0.001 A / h 30 min at 500 nm | - | AC 220 V / 50 Hz, 110 V / 60 Hz. | 480 × 350 × 220 mm | - | 11 kg | - | - | 120 W | Display resolution 128 × 64 Dots LCD | - | - | - | - | - | - | - | - |
| LVS-C11 | 320 ~ 1000 nm | - | 2 nm | ± 0.5 nm | ≤ 0.2 nm | (-0.3) ~ 3 A | - | ± 0.3 % T | 0.15 % τ | - | - | Import Silicon Photodiode Detector | Import Tungsten Lamp | ≤ 0.05 % τ | 0.001 A / h 30 min at 500 nm | - | AC 220 V / 50 Hz, 110 V / 60 Hz. | 480 × 350 × 220 mm | - | 11 kg | - | - | 120 W | Display resolution 128 × 64 Dots LCD | - | - | - | - | - | - | - | - |
| LVS-A20 | - | - | - | ± 2nm | ≤ 1 nm | 0 to 100.0 %T 0 to 1.999 A 0 to 1999 C | - | ± 0.5 % T | ≤ 0.2 % T | - | - | Silicon Photocell | - | - | - | - | - | - | 100%（T）noise≤0.3%(T) ， 0%（T) noise ≤0.2 %(T) | - | - | - | - | - | - | - | - | - | - | - | - | - |
| LVS-A21 | - | - | - | ± 2nm | ≤ 1 nm | 0 to 100.0 %T 0 to 1.999 A 0 to 1999 C | - | ± 0.5 % T | ≤ 0.2 % T | - | - | Silicon Photocell | - | - | - | - | - | - | 100%（T）noise≤0.3%(T) ， 0%（T) noise ≤0.2 %(T) | - | - | - | - | - | - | - | - | - | - | - | - | - |
| LVS-A30 | - | - | - | ± 0.8 nm | ≤ 0.3 nm | 0 to 200 %T, -0.3 to 3 A, 0 to 9999 C | - | ± 0.002A (0 to 0.5A), ±0.004 A (0.5 to 1A), ±0.5 % T (0 to 100% T) | ≤ 0.001A (0 to 0.5 A), ≤0.002A (0.5 to 1A), ≤0.2 % T (0 to 100% T) | - | - | Silicon Photocell | - | - | ± 0.002 A/h (500 nm, 0A) | - | - | - | ≤0.2 % T/3 min (250/500 nm, 0% T), ≤ 0.5% T/3 min (250/500 nm, 100% T) | - | - | - | - | - | - | - | - | - | - | - | - | - |
