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Double Beam UV/VIS Spectrophotometer LUS-B41

Double Beam UV/VIS Spectrophotometer LUS-B41

Double Beam UV/VIS Spectrophotometer LUS-B41 is a sturdy and long-lasting construction that is enhanced with a graphic display and a color-coded key for easy identification. Configured with highly stable optics with a spectral bandwidth of 1.8 nm and grating with 1200 lines/mm. It is a safe and user-friendly device working within a wavelength range between 190 to 1100 nm.

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Wavelength Range 190 to 1100 nm
Wavelength Accuracy ± 0.3 nm
Wavelength Repeatability ≤ 0.2 nm
Spectral Bandwidth 1.8/1.0 nm
Optical System Double Beam 1200 nm grating
Photometric Range 0 to 200%T, -0.3 to 3 A,0 to 9999 C
Photometric Accuracy ± 0.002A (0 to 0.5 A), ± 0.003 A (0.5 to 1A), ± 0.3 % T (0 to 100 %T)
Photometric Repeatability ≤0.001A (0 to 0.5 A), ≤0.002A (0.5 to 1 A), ≤0.2%T (0 to 100% T)
Stray Light ≤ 0.05 % T (220/360 nm)
Scan Speed High, Medium, low max 2000 nm/min
Stability ± 0.001A/H (500 nm,0 A)
Baseline Flatness ± 0.001 A
Noise ≤0.2 % T/3 min (250/500 nm 0%T), ≤0.3%T/3 min (250/500 nm 100%T)
Sample Compartment Accomadate 5 to 100 mm
Detector Silicon Photodiode
Power Supply AC 90 to 250 V,50/60 Hz
Dimension 545 × 468 ×245 mm
Net Weight 21 Kg
Gross Weight 25 Kg
  • Configured with high-resolution LED display for clear observation of working parameters
  • Integrated with silicon photodiode detector for convenient operation
  • Furnished with Deuterium lamp and Tungsten lamp with advanced system
  • Designed with Stainless steel and quartz fiber to ensure long-term usability
  • It features a remote USB-RS322 interface to provide easy communication with computer and printer
  • Improved with a low noise level for better working environment
  • Cost-effective and minimal maintenance with simple handling

It is extensively used in research facilities, laboratories, educational environments pharmaceuticals, hospitals, and medical fields for the diagnosis of diseases and detection of impurities in an organic compound.

Compare Models

Model Wavelength Range Wavelength Accuracy Wavelength Repeatability Spectral Bandwidth Optical System Photometric Range Photometric Accuracy Photometric Repeatability Stray Light Scan Speed Stability Baseline Flatness Noise Sample Compartment Detector Power Supply Dimension Net Weight Gross Weight
LUS-B30 - ± 0.1nm @ 656.1 nm, ± 0.3 nm @ all ≤ 0.1 nm - - 0 to 200 %T, -0.3 to 3A, 0 to 9999 C (0 to 9999F) 0 to 200 %T, -0.3 to 3A, 0 to 9999 C (0 to 9999F) ≤0.15 % T (0 to 100 %T), 0.001A (0 to 0.5A), 0.002A (0.5 to 1A) - - ± 0.0003 A/h @ 500 nm - 0.0005 A @ 500 nm - Imported silicon photodiode - 810 × 660 × 390 mm - -
LUS-B31 - ± 0.1nm @ 656.1 nm, ± 0.3 nm @ all ≤ 0.1 nm - - 0 to 200 %T, -0.3 to 3A, 0 to 9999 C (0 to 9999F) 0 to 200 %T, -0.3 to 3A, 0 to 9999 C (0 to 9999F) ≤0.15 % T (0 to 100 %T), 0.001A (0 to 0.5A), 0.002A (0.5 to 1A) - - ± 0.0003 A/h @ 500 nm - 0.0005 A @ 500 nm - Imported silicon photodiode - 810 × 660 × 390 mm - -
LUS-B32 - ± 0.1nm @ 656.1 nm, ± 0.3 nm @ all ≤ 0.1 nm - - 0 to 200 %T, -0.3 to 3A, 0 to 9999 C (0 to 9999F) 0 to 200 %T, -0.3 to 3A, 0 to 9999 C (0 to 9999F) ≤0.15 % T (0 to 100 %T), 0.001A (0 to 0.5A), 0.002A (0.5 to 1A) - - ± 0.0003 A/h @ 500 nm - 0.0005 A @ 500 nm - Imported silicon photodiode - 880 × 690 × 520 mm - -
LUS-B16 190 ~ 1100 nm ± 0.3 nm ≤ 0.1 nm 0.5 / 1.0 / 2.0 / 4.0 nm adjustable - (-4) ~ 4 A ± 0.3 % τ(0 - 100 % τ) ; ± 0.002 A (0 ~ 0.5 A) ; ± 0.003 A(0.5 A ~ 1 A) 0.15 % τ(0 -100 % τ); ± 0.001 A(0 ~ 0.5 A) ; ± 0.0015 A(0.5 A ~ 1 A) ≤ 0.03 % τ (220 nm NaI, 340 nm NaNO2) - - ± 0.001 A ± 0.0002A @500nm - - - - - -
LUS-B40 - ± 0.1nm (D2, 656.1 nm), ± 0.3 nm full range ≤ 0.1 nm - - 0 to 200 %T, -0.3 to 3.0 A, 0 to 9999 C (0 to 9999F)
± 0.2T (0 to 1009 % T)
± 0.002 Abs (0 to 0.5 Abs)
± 0.004 Abs (0.5 to1.0 Abs)
≤ 0.05 % 6T (0 to100 % 6T)
0.001 Abs (0 to 0.5 Abs)
0.002 Abs (0.5 to 1.0 Abs)
- - ± 0.0004 A/h @ 500 nm - ± 0.0004 - Imported silicon photodiode - 630 × 430 × 210 mm - -
LUS-B15 - - - - - - - - - - - - - - Silicon photo diode - 590 x 460 x 220 mm - -
LUS-B10 190 to 1100 nm ±0.3 nm ≤0.1 nm 1.8 nm Double beam - ±0.3% τ (0 to 100%τ) ± 0.002 A (0 to 0.5 A) ± 0.003 A (0.5 A to 1 A) 0.15% τ (0 to 100% τ) ± 0.001 A (0 to 0.5 A) ± 0.0015 A (0.5 A to 1 A) ≤0.03% τ (220 nm NaI, 340 nm NaNO2) - 0.0005 A/h @500 nm ± 0.001 A ± 0.002 A @500 nm - Silicon photodiode AC 220/110 V, 50/60 Hz - 28 kg -
LUS-B13 190 to 1100 nm ±0.3 nm ≤0.1 nm 1.0 nm Double beam - ±0.3% τ (0 to 100%τ) ± 0.002 A (0 to 0.5 A) ± 0.003 A (0.5 A to 1 A) 0.15% τ (0 to 100% τ) ± 0.001 A (0 to 0.5 A) ± 0.0015 A (0.5 A to 1 A) ≤0.03% τ (220 nm NaI, 340 nm NaNO2) - 0.0005 A/h @500 nm ± 0.001 A ± 0.002 A @500 nm - Silicon photodiode AC 220/110 V, 50/60 Hz - 28 kg -
LUS-B11 - - - - - - - - - - ± 0.001 A/h @ 500nm ±0.001A/h ± 0.0005 A/h - Silicon photodiode - - - -
LUS-B20 - - - - - - - - - - - - - - Silicon photodiode detector - - - -
LUS-B12 190 to 1100 nm ±0.3 nm 0.2 nm 1.8 nm Double beam, C-T monochromator,1200 L/mm holographic grating - - - ≤0.05% T @ 220 nm, 360 nm - - ≤±0.001 Abs - - - 220V ± 10% 50 Hz, 85 VA / 110 V ± 10% 60 Hz 85 VA - 17 kg 26 kg
LUS-B17 190 to 1100 nm ± 0.3 nm 0.2 nm - Double beam - ± 0.3% T 0 .15% T 50.05% r (220 nm Na l, 360nm NaN02) - 0.001 A / h at 500 nm ± 0.001 A - - Import Silicon Photodiode - - - -
LUS-B41 190 to 1100 nm ± 0.3 nm ≤ 0.2 nm 1.8/1.0 nm Double Beam 1200 nm grating 0 to 200%T, -0.3 to 3 A,0 to 9999 C ± 0.002A (0 to 0.5 A), ± 0.003 A (0.5 to 1A), ± 0.3 % T (0 to 100 %T) ≤0.001A (0 to 0.5 A), ≤0.002A (0.5 to 1 A), ≤0.2%T (0 to 100% T) ≤ 0.05 % T (220/360 nm) High, Medium, low max 2000 nm/min ± 0.001A/H (500 nm,0 A) ± 0.001 A ≤0.2 % T/3 min (250/500 nm 0%T), ≤0.3%T/3 min (250/500 nm 100%T) Accomadate 5 to 100 mm Silicon Photodiode AC 90 to 250 V,50/60 Hz 545 × 468 ×245 mm 21 Kg 25 Kg
LUS-B42 190nm to 1100nm ± 0.3nm ≤ 0.1nm 0.5 to 6.0nm Optical double beam system -0.00~200.0(%T), -4.0~4.0(A) ±0.002Abs(0~0.5Abs)
± 0.004Abs(0.5~1.0Abs)
±0.3%T(0~100%T)
≤ 0.001Abs(0~0.5Abs)
≤ 0.002Abs(0.5~1.0Abs)
≤0.1%T(0~100%T)
≤ 0.03% (220nm, NaI;360nm, NaNO2) High/medium/low /very low - - ≤0.1%T(100%T), ≤0.05%T(0%T), ≤±0.0005A/h (500nm,0Abs,2nm bandwidth) - Photocell AC90V to 250V, 50H/ 60Hz 600 × 470 × 220mm - -
LUS-B23 190 to 900nm ±0.1nm - 4nm, 2nm, 1nm, 0.5nm, 0.2nm, 0.1nm Double beam - - - ≤0.02% τ (220nm NaI,340nm NaNO2) - 0.0005A/h(500nm After preheating) ±0.001A ±0.0002A (500nm After preheating) - Photomultiplier Tubes AC 220V/50Hz 110V/60Hz - - -
LUS-B43 190 to 1100nm ±0.3nm ≤ 0.1nm 2nm or 1nm Double beam 0.0 to 200.0%T
-0.301 to 4.000A
0.000 to 9999C
±0.3%T
±0.002Abs (0 to 0.5A)
±0.004 Abs (0.5 to 1A)
≤ 0.15%T
0.001 Abs (0 to 0.5A)
0.002 Abs (0.5 to 1A)
≤ 0.02%T (at 220nm NaI, 360nm NaNo₂) - - - - - Silicon photocell AC220V±22V, 50Hz±1Hz - 34 Kg 42.5 Kg

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