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Vis Spectrophotometer LVS-A11

Vis Spectrophotometer LVS-A11

Visible spectrophotometer with single beam has 1200 lines/mm grating optical system. It uses silicon photo diode detector and tungsten lamp as light source which provides the best wavelength coverage across the working range of the spectrophotometer. It incorporates the latest technology having high accuracy with digital wavelength display and automatic calibration facility. This highly accurate spectrophotometer is designed for industries and laboratories.

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Wavelength Range 335 ~ 1000 nm
Spectral Bandwidth 4 nm
Wavelength Accuracy ± 2 nm
Wavelength Repeatability 1 nm
Photometric Range T: 0 ~ 199.9 % , A: (-0.3) ~ 2.5A bs, F: 0 ~ 9999, C: 0 ~ 9999
Photometric Accuracy ± 0.5 % T
Photometric Repeatability 0.2 % T
Detector Silicon photo diode
Light Source Tungsten lamp (Socket Type, 20W / 12V, 2000h)
Stray Light ≤ 0.5 % T (360 nm)
Stability ≤ 0.5 % T / 5min
Power Requirement 220 V / 50 Hz
Dimensions 385 × 330 × 185 mm
Weight 10 kg
Optical System 1200 lines / mm grating
  • Wavelength range 335 nm - 1000 nm
  • 1200 lines / mm grating optical system
  • Spectral bandwidth 4 nm
  • Automatic 0 % transmittance
  • 100 % Transmittance calibration
  • High accuracy with digital wavelength display

Visible spectrophotometer is used for quantitative and qualitative analysis, detection of Impurities and functional groups determination. DNA/Protein analysis.

Compare Models

Model Wavelength Range Setting Wavelength Spectral Bandwidth Wavelength Accuracy Wavelength Repeatability Photometric Range Photometric Mode Photometric Accuracy Photometric Repeatability Transmittance accuracy Transmittance repeatability Detector Light Source Stray Light Stability Data Output Port Power Requirement Dimensions Noise Weight Gross Weight Net Weight Power Display LCD Optical System Baseline Linearity Baseline Drift Baseline Flatness Printer Port Packing Size Software Packing Weight
LVS-A10 330 to 1000 nm - 5 nm ± 2 nm ≤ 1.0 nm T: 0 to199.9%, A: -0.3 to2.5 Abs, F; 0 to 9999, C: 0 to 9999 - ± 0.5 % T ≤ 0.2 % T - - Silicone photo diode 20 W, 12 V Tungsten lamp ≤ 0.5 % T (360 nm) Dark current: ≤ 0.2 % T, Light Current: ≤ 0.5 % T - 220 V ± 20 V, 50 Hz ± 1 Hz 470 × 350 × 200 mm - 8 kg - - - - Single beam, C-T grating monochromator 1200 lines/ mm - - - - - - -
LVS-A11 335 ~ 1000 nm - 4 nm ± 2 nm 1 nm T: 0 ~ 199.9 % , A: (-0.3) ~ 2.5A bs, F: 0 ~ 9999, C: 0 ~ 9999 - ± 0.5 % T 0.2 % T - - Silicon photo diode Tungsten lamp (Socket Type, 20W / 12V, 2000h) ≤ 0.5 % T (360 nm) ≤ 0.5 % T / 5min - 220 V / 50 Hz 385 × 330 × 185 mm - 10 kg - - - - 1200 lines / mm grating - - - - - - -
LVS-B10 325 ~ 1000 nm Automatic 2 nm ± 1.0 nm ≤ 0.2 nm (-0.3) ~ 3 A - ± 0.3 % T 0.15 % τ - - Import Silicon Photodiode Detector Import Tungsten Lamp ≤ 0.05 % τ 0.001 A / h at 500 nm - AC 220 V / 50 Hz, 110 V / 60 Hz. 460 × 330 × 210 mm - 11 kg - - 120 W - - - - - - - - -
LVS-C10 320 ~ 1100 nm - 4 nm ± 0.5 nm ≤ 0.2 nm (-0.3) ~ 3 A - ± 0.3 % T 0.15 % τ - - Import Silicon Photodiode Detector Import Tungsten Lamp ≤ 0.05 % τ 0.001 A / h 30 min at 500 nm - AC 220 V / 50 Hz, 110 V / 60 Hz. 480 × 350 × 220 mm - 11 kg - - 120 W Display resolution 128 × 64 Dots LCD - - - - - - - -
LVS-C11 320 ~ 1000 nm - 2 nm ± 0.5 nm ≤ 0.2 nm (-0.3) ~ 3 A - ± 0.3 % T 0.15 % τ - - Import Silicon Photodiode Detector Import Tungsten Lamp ≤ 0.05 % τ 0.001 A / h 30 min at 500 nm - AC 220 V / 50 Hz, 110 V / 60 Hz. 480 × 350 × 220 mm - 11 kg - - 120 W Display resolution 128 × 64 Dots LCD - - - - - - - -
LVS-A20 - - - ± 2nm ≤ 1 nm 0 to 100.0 %T 0 to 1.999 A 0 to 1999 C - ± 0.5 % T ≤ 0.2 % T - - Silicon Photocell - - - - - - 100%(T)noise≤0.3%(T) , 0%(T) noise ≤0.2 %(T) - - - - - - - - - - - - -
LVS-A21 - - - ± 2nm ≤ 1 nm 0 to 100.0 %T 0 to 1.999 A 0 to 1999 C - ± 0.5 % T ≤ 0.2 % T - - Silicon Photocell - - - - - - 100%(T)noise≤0.3%(T) , 0%(T) noise ≤0.2 %(T) - - - - - - - - - - - - -
LVS-A30 - - - ± 0.8 nm ≤ 0.3 nm 0 to 200 %T, -0.3 to 3 A, 0 to 9999 C - ± 0.002A (0 to 0.5A), ±0.004 A (0.5 to 1A), ±0.5 % T (0 to 100% T) ≤ 0.001A (0 to 0.5 A), ≤0.002A (0.5 to 1A), ≤0.2 % T (0 to 100% T) - - Silicon Photocell - - ± 0.002 A/h (500 nm, 0A) - - - ≤0.2 % T/3 min (250/500 nm, 0% T), ≤ 0.5% T/3 min (250/500 nm, 100% T) - - - - - - - - - - - - -

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